Dark exciton decay dynamics of a semiconductor quantum dot

被引:20
作者
Dalgarno, PA
Smith, JM
Gerardot, BD
Govorov, AO
Karrai, K
Petroff, PM
Warburton, RJ [1 ]
机构
[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA
[3] Univ Munich, Dept Phys, D-80539 Munich, Germany
[4] Univ Munich, Ctr Nanosci, D-80539 Munich, Germany
[5] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 14期
关键词
D O I
10.1002/pssa.200562029
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report measurements of the exciton decay dynamics of a single self-assembled quantum dot following non-resonant excitation. The singly charged exciton, the trion, exhibits a simple one component exponential decay corresponding to radiative recombination. Conversely, the neutral exciton exhibits a two component exponential decay. We argue that the secondary component arises from dark exciton creation and subsequent conversion to a bright exciton through a spin flip. The spin flip time is a strong function of the bias applied between a Fermi reservoir close to the dot and a Schottky gate electrode as a result of a Kondo-like spin swap process.
引用
收藏
页码:2591 / 2597
页数:7
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