Low-temperature atmospheric-pressure metal-organic chemical vapor deposition of molybdenum nitride thin films

Amorphous molybdenum nitride thin films were deposited from tetrakis(dimethylamido) molybdenum(IV), Mo(N(CH3)(2))(4), and ammonia at low substrate temperatures (200-400 degrees C). The films were characterized by Rutherford backscattering spectroscopy, elastic recoil detection and X-ray photoelectron spectroscopy. Rutherford backscattering gave a N/Mo = 1.4-1.5 stoichiometry that did not vary significantly with deposition temperature. The hydrogen content, determined by elastic recoil detection, varied from H/Mo = 1.0 to 0.45 with the content decreasing as the deposition temperature was increased. Carbon contamination was not observed in the film bulk. The films had high resistivities (approximate to 10(4) mu Omega cm).