Electrically Pumped Vertical-External-Cavity Surface-Emitting Lasers With Patterned Tunnel Junction for Single Transversal-Mode Emission

被引：1

作者：

Walczak, Jaroslaw ^{[1
]}

Sarzala, Robert P. ^{[1
]}

Wasiak, Michal ^{[1
]}

Nakwaski, Wlodzimierz ^{[1
]}

Sirbu, Alexei ^{[2
]}

Czyszanowski, Tomasz ^{[1
]}

Kapon, Eli ^{[2
]}

机构：

[1] Tech Univ Lodz, Inst Phys, PL-90924 Lodz, Poland

[2] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2015年 / 21卷 / 06期

关键词：

Semiconductor lasers; vertical external cavity surface emitting lasers; tunnel junction; numerical simulations; LOW-THRESHOLD; INP; DESIGN; POWER; GAAS; DISCRIMINATION; OPTIMIZATION; ALXGA1-XAS; ABSORPTION; OUTPUT;

D O I：

10.1109/JSTQE.2015.2423614

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on a numerical analysis of methods for current injection into AlInGaAs/InP tunnel-junction electrically pumped vertical-external-cavity surface-emitting lasers. The tunnel junction is patterned to minimize the current crowding effect and support the fundamental transverse modes. Optimization of the tunnel junction radius predicts 9-mW emission and 4% wall-plug efficiency in the single-mode regime. Additional patterning of the tunnel junction in the form of a coaxial ring, without modifying its total radius but reducing its area, maintains or improves the emitted power and in addition enhances wall-plug efficiency by around 60%. A design of E-VECSEL is proposed which offers five times larger emitted power and wall-plug efficiency in the single-mode regime in comparison to recently reported experimental devices.

引用

页码：485 / 492

页数：8

共 37 条

[1] OPTICAL DISPERSION-RELATIONS FOR GAP, GAAS, GASB, INP, INAS, INSB, ALXGA1-XAS, AND IN1-XGAXASYP1-Y [J].