Study of the Effects of Parasitic Inductances and Device Capacitances on 1200 V, 35 A SiC MOSFET Based Voltage Source Inverter Design

被引：0

作者：

Nayak, Parthasarathy ^{[1
]}

Krishna, Vamshi M. ^{[1
]}

Vasudevakrishna, K. ^{[1
]}

Hatua, Kamalesh ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India

来源：

2014 IEEE INTERNATIONAL CONFERENCE ON POWER ELECTRONICS, DRIVES AND ENERGY SYSTEMS (PEDES) | 2014年

关键词：

Common mode noise; device characterization; double pulse test; EMI; parasitic inductance; SiC MOSFET; switching energy loss;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

SiC MOSFET can switch five to ten times faster compared to state of the art Si IGBT. Due to that SiC MOSFET based power converter can be lighter in weight, highly efficient, compact in size compared to Si IGBT based power converters. But the parasitic inductance in the power circuit will not allow SiC MOSFET to switch to its full potential due to very high device voltage overshoot, sustained oscillation in line currents and device voltages, high EMI noise injected in the control circuit etc. Therefore it is very important to know the behavior of the switching characteristics of the device at different parasitic condition. In this paper switching behavior of a 1200V, 35 A, SiC MOSFET is tested extensively in different parasitic condition. A limiting value of these inductances is provided to build a voltage source inverter with SiC MOSFET utilizing its full switching potential.

引用

页数：6

共 9 条

[1] Design Considerations and Performance Evaluation of 1200-V 100-A SiC MOSFET-Based Two-Level Voltage Source Converter
Hazra, Samir
Madhusoodhanan, Sachin
Moghaddam, Giti Karimi
Hatua, Kamalesh
Bhattacharya, Subhashish
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2016, 52 (05) : 4257 - 4268
[2] Active Gate Driving Technique for a 1200 V SiC MOSFET to Minimize Detrimental Effects of Parasitic Inductance in the Converter Layout
Nayak, Paithasarathy
Hatua, Kamalesh
2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2016,
[3] Active Gate Driving Technique for a 1200 V SiC MOSFET to Minimize Detrimental Effects of Parasitic Inductance in the Converter Layout
Nayak, Parthasarathy
Hatua, Kamalesh
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2018, 54 (02) : 1622 - 1633
[4] Design of a 250 kW, 1200 V SiC MOSFET-Based Three-Phase Inverter by Considering a Subsystem Level Design Optimization Approach
Wijenayake, Ajith H.
Olejniczak, Kraig J.
Simco, David
Minden, Stephen
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Lostetter, Alex
Martin, Daniel
2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2017, : 939 - 946
[5] Passive Damping of Device Current and Motor Terminal Voltage in a SiC MOSFET Based Inverter Fed Induction Motor Drive
Nayak, Parthasarathy
Sukhatme, Yash
Hatua, Kamalesh
2016 IEEE INTERNATIONAL CONFERENCE ON POWER ELECTRONICS, DRIVES AND ENERGY SYSTEMS (PEDES), 2016,
[6] Design Considerations and Performance Test for SiC MOSFET Based 1000V/ 1.5MHz Pulse Power Inverter
Liu, Chunhui
Lei, Qin
2018 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2018, : 6641 - 6645
[7] Design of a 1500V Si IGBT/SiC MOSFET Hybrid Switch-Based Three-Level Active NPC Inverter
Liu, Haichen
Zhao, Tiefu
Gafford, Jim
Essakiappan, Somasundaram
Manjrekar, Madhav
2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2021, : 168 - 173
[8] Comparative Study of a 3.3 kV SiC-based Voltage and Current Source Inverter for High-Speed Motor Drive Applications
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Anurag, Anup
Bhattacharya, Subhashish
2021 IEEE 12TH ENERGY CONVERSION CONGRESS AND EXPOSITION - ASIA (ECCE ASIA), 2021, : 2211 - 2217
[9] SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter
Fuentes, Carlos D.
Mueller, Marcus
Bernet, Steffen
Kouro, Samir
ENERGIES, 2021, 14 (11)

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