Influence of hydrogen annealing on the properties of AZO thin films

被引：0

作者：

Iordache, Iulian ^{[1
]}

Sobetkii, Arcadie ^{[2
]}

Vitelaru, Catalin ^{[3
]}

Chitanu, Elena ^{[1
]}

Banciu, Cristina Antonela ^{[1
]}

Iosip, Gabriela ^{[1
]}

Marinescu, Virgil ^{[1
]}

Sbarcea, Gabriela ^{[1
]}

Acmola, Leila ^{[4
]}

Capatina, Valentina ^{[2
]}

机构：

[1] Natl Inst Res & Dev Elect Engn ICPE CA Bucharest, 313 Splaiul Unirii, Bucharest 030138 3, Romania

[2] SC MGMSTAR CONSTRUCT SRL, 7 Poncota St, Bucharest 022773, Romania

[3] Natl Inst Res & Dev Optoelect, INOE 2000,409 Atomistilor St, Magurele 077125, Romania

[4] Natl Mil Coll Constanta, Alexandru Loan Cuza, 80 Dezrobirii St, Constanta 900234, Romania

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2022年 / 24卷 / 5-6期

关键词：

AZO; Thin films; TCO; Magnetron sputtering; OPTICAL-PROPERTIES; RF POWER; PARAMETERS; THICKNESS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The aim of this study was to obtain Al-doped ZnO (AZO) thin films by RF magnetron sputtering deposition with controllable structural, optical and electrical properties by adjusting the preparation process with a H-2 post-annealing treatment. The XRD pattern indicates a the presence of single phase with hexagonal crystalline structure of ZnO. The AZO thin film obtained by 6 hours deposition process at a power density of similar to 7.5 W/cm(2) exhibited the best transparent conductive oxide (TCO) electrical and optical properties, reaching electrical resistivity of 2.74.10(-3) Omega.cm, and an 80% transparency in the visible range.

引用

页码：256 / 262

页数：7

共 27 条

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