Cu-related recombination in CdS/CdTe solar cells

被引：52

作者：

Demtsu, S. H. ^{[1
]}

Albin, D. S. ^{[2
]}

Sites, J. R. ^{[1
]}

Metzger, W. K. ^{[2
]}

Duda, A. ^{[2
]}

机构：

[1] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 08期

关键词：

cadmium telluride; solar cells; photoluminescence; capacitance profiling;

D O I：

10.1016/j.tsf.2007.08.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu used in the back contact of CdS/CdTe solar cells is known to improve contact behavior and open-circuit voltage. A study of devices made with varying Cu amounts confirmed these observations. However, Cu was also found to be deleterious to current collection. Time-resolved photoluminescence measurements of CdTe devices show that carrier lifetime decreased with increased Cu concentration. Drive-level-capacitance-profiling and low-temperature photoluminescence suggest this decrease in lifetime was associated with increased recombination center density introduced by Cu in the CdTe layer. The resulting impact of increased Cu on device performance was a voltage-dependent collection of photogenerated carriers that reduced fill-factor. (C) 2007 Published by Elsevier B.V.

引用

页码：2251 / 2254

页数：4

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