cadmium telluride;
solar cells;
photoluminescence;
capacitance profiling;
D O I:
10.1016/j.tsf.2007.08.035
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Cu used in the back contact of CdS/CdTe solar cells is known to improve contact behavior and open-circuit voltage. A study of devices made with varying Cu amounts confirmed these observations. However, Cu was also found to be deleterious to current collection. Time-resolved photoluminescence measurements of CdTe devices show that carrier lifetime decreased with increased Cu concentration. Drive-level-capacitance-profiling and low-temperature photoluminescence suggest this decrease in lifetime was associated with increased recombination center density introduced by Cu in the CdTe layer. The resulting impact of increased Cu on device performance was a voltage-dependent collection of photogenerated carriers that reduced fill-factor. (C) 2007 Published by Elsevier B.V.
机构:
Univ Kebangsaan Malaysia, UKM, Fac Engn, Dept Elect Elect & Syst Engn, Bangi 43600, Selangor, MalaysiaUniv Kebangsaan Malaysia, UKM, Fac Engn, Dept Elect Elect & Syst Engn, Bangi 43600, Selangor, Malaysia
Amin, Nowshad
Sopian, Kamaruzzaman
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机构:Univ Kebangsaan Malaysia, UKM, Fac Engn, Dept Elect Elect & Syst Engn, Bangi 43600, Selangor, Malaysia
机构:
New Jersey Inst Technol, Dept Phys, CNBM New Energy Mat Res Ctr, Newark, NJ 07102 USANew Jersey Inst Technol, Dept Phys, CNBM New Energy Mat Res Ctr, Newark, NJ 07102 USA
Opyrchal, Halina
Chen, Dongguo
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机构:
New Jersey Inst Technol, Dept Phys, CNBM New Energy Mat Res Ctr, Newark, NJ 07102 USANew Jersey Inst Technol, Dept Phys, CNBM New Energy Mat Res Ctr, Newark, NJ 07102 USA
Chen, Dongguo
Cheng, Zimeng
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机构:
New Jersey Inst Technol, Dept Phys, CNBM New Energy Mat Res Ctr, Newark, NJ 07102 USANew Jersey Inst Technol, Dept Phys, CNBM New Energy Mat Res Ctr, Newark, NJ 07102 USA
Cheng, Zimeng
Chin, Ken
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机构:
New Jersey Inst Technol, Dept Phys, CNBM New Energy Mat Res Ctr, Newark, NJ 07102 USANew Jersey Inst Technol, Dept Phys, CNBM New Energy Mat Res Ctr, Newark, NJ 07102 USA
机构:
Univ Autonoma Madrid, Fac Sci, Dept Mat Phys, Crystal Growth Lab, E-28049 Madrid, SpainUniv Autonoma Madrid, Fac Sci, Dept Mat Phys, Crystal Growth Lab, E-28049 Madrid, Spain
Rubio, Sandra
Luis Plaza, Jose
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机构:
Univ Autonoma Madrid, Fac Sci, Dept Mat Phys, Crystal Growth Lab, E-28049 Madrid, SpainUniv Autonoma Madrid, Fac Sci, Dept Mat Phys, Crystal Growth Lab, E-28049 Madrid, Spain
Luis Plaza, Jose
Dieguez, Ernesto
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机构:
Univ Autonoma Madrid, Fac Sci, Dept Mat Phys, Crystal Growth Lab, E-28049 Madrid, SpainUniv Autonoma Madrid, Fac Sci, Dept Mat Phys, Crystal Growth Lab, E-28049 Madrid, Spain