Effect of damage by 2 MeV He ions and annealing on Hc2 in MgB2 thin films -: art. no. 072507

被引：39

作者：

Gandikota, R ^{[1
]}

Singh, RK

Kim, J

Wilkens, B

Newman, N

Rowell, JM

Pogrebnyakov, AV

Xi, XX

Redwing, JM

Xu, SY

Li, Q

Moeckly, BH

机构：

[1] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

[3] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[5] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[6] Superconductor Technol Inc, Santa Barbara, CA 93111 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2012524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (T-c), resistivity (rho), and upper critical field (H-c2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in T-c with residual resistivity (rho(0)), and produces maxima in both H-c2(perpendicular to)(0) and H-c2(parallel to)(0). Below T(c)s of about 25 K, H-c2(0) depends roughly linearly on T-c, while the anisotropy of H-c2(0) decreases as T-c decreases. Annealing the films reproduces the T-c versus rho(0) dependence but not the H-c2(0) values induced by damage. (C) 2005 American Institute of Physics.

引用

页数：3

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