Photoluminescence study of in situ annealed InAs quantum dots:: Double-peak emission associated with bimodal size distribution

被引：58

作者：

Lee, H ^{[1
]}

Lowe-Webb, R

Johnson, TJ

Yang, WD

Sercel, PC

机构：

[1] Univ Oregon, Inst Mat Sci, Dept Phys, Eugene, OR 97403 USA

[2] Univ Oregon, Oregon Ctr Opt, Eugene, OR 97403 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 24期

关键词：

D O I：

10.1063/1.122805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a photoluminescence study of self-assembled InAs islands subjected to in situ annealing prior to the growth of a capping layer. A distinctive double-peak feature is observed in the photoluminescence spectra of annealed samples. The power dependence of the photoluminescence spectra reveals that the double-peak emission is associated with the ground-state transition of islands in two different size branches. This observation agrees with a previous study, which demonstrated that the InAs island size distribution bifurcates during post-growth annealing. The temperature dependence of the photoluminescence intensities from samples with bimodal island size distributions illustrates that different thermal activation energies for carrier emission are associated with islands in different size branches. (C) 1998 American Institute of Physics. [S0003-6951(98)03050-2].

引用

页码：3556 / 3558

页数：3

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