Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers

被引：15

作者：

Majid, Mohammed Abdul ^{[1
]}

Childs, David T. D. ^{[1
]}

Shahid, Hifsa ^{[1
]}

Chen, Siming ^{[1
]}

Kennedy, Kenneth ^{[1
]}

Airey, Robert J. ^{[1
]}

Hogg, Richard A. ^{[1
]}

Clarke, Edmund ^{[2
]}

Howe, Patrick ^{[2
]}

Spencer, Peter D. ^{[2
]}

Murray, Ray ^{[2
]}

机构：

[1] Univ Sheffield, EPSRC Natl Ctr Technol 3 5, Sheffield S3 7HQ, S Yorkshire, England

[2] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, London SW7 2AZ, England

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2011年 / 17卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

Molecular beam epitaxy; QD lasers; quantum dots (QDs); semiconductor lasers; BEAM EPITAXIAL-GROWTH; MU-M; STRAIN; GAIN; PHOTOLUMINESCENCE; THRESHOLD; EFFICIENCY; LINEWIDTH; EMISSION; ISLANDS;

D O I：

10.1109/JSTQE.2011.2108270

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By choice of appropriate growth conditions and optimization of the strain interactions between two closely stacked InAs/GaAs quantum dot (QD) layers, the emission wavelength of the QDs can be significantly extended, giving room-temperature emission from highly uniform QD ensembles in excess of 1500 nm. These QD bilayers are incorporated into edge-emitting laser structures and room-temperature ground-state lasing at 1420 nm and electroluminescence at 1515 nm are observed. Under high-bias conditions, asymmetric broadening of peaks in the laser gain spectra are observed, extending positive net modal gain from the devices to beyond 1500 nm, and the origin of this broadening is discussed.

引用

页码：1334 / 1342

页数：9

共 53 条

[31] Molecular-beam epitaxial growth and characteristics of highly uniform InAs/GaAs quantum dot layers [J].