Cu2O/InGaN heterojunction thin films with enhanced photoelectrochemical activity for solar water splitting

被引:31
作者
Alizadeh, Mahdi [1 ]
Tong, Goh Boon [2 ]
Qadir, Karwan Wasman [3 ,4 ]
Mehmood, Muhammad Shahid [5 ]
Rasuli, Reza [1 ]
机构
[1] Univ Zanjan, Dept Phys, Zanjan 4537138791, Iran
[2] Univ Malaya, Fac Sci, LDMRC, Dept Phys, Kuala Lumpur 50603, Malaysia
[3] Salahaddin Univ Erbil, Coll Educ, Dept Phys, CNRL, Erbil 44002, Kurdistan Regio, Iraq
[4] Tishk Int Univ, Fac Educ, Phys Educ Dept, Erbil 44001, Iraq
[5] Fudan Univ, Micronano Syst Ctr, Sch Informat Sci & Technol, Shanghai 200433, Peoples R China
基金
美国国家科学基金会;
关键词
Cu2O/InGaN heterojunction; Photoelectrochemical behavior; Solar water splitting; Thin films; OPTICAL-PROPERTIES; NANOWIRE ARRAYS; FLOW-RATE; EFFICIENT; PHOTOANODES; EVOLUTION; BEHAVIOR;
D O I
10.1016/j.renene.2020.04.107
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
We study Cu2O/InGaN heterojunction thin films with different thicknesses of Cu2O layer as a photoanode in photoelectrochemical (PEC) water splitting cell. Results show that the bandgap energy of Cu2O/InGaN heterojunction thin films is 2.60-2.72 eV and, according to Vegard's law, the indium content of the InGaN thin film is 22%. Electrochemical impedance spectroscopy shows the charge-transfer resistance value of about 0.4 k Omega for the optimized sample revealing enhanced charge separation and transfer at the interface. A maximum photocurrent density of 0.16 mA cm(-2 )at 0.5 V vs. Ag/AgCl was obtained for the Cu2O/InGaN heterojunction thin films with an overall thickness of 250 nm. The obtained value is 4.2 and 3.2 times higher than that of pure InGaN and Cu2O thin films photoanodes, respectively. We showed charge separation mechanism in the Cu2O/InGaN heterojunction photoelectrodes. According to our model, gradient energy bandgap reduce the recombination rate of photo-induced electron-hole pairs, and significantly enhance the PEC performance. (C) 2020 Elsevier Ltd. All rights reserved.
引用
收藏
页码:602 / 609
页数:8
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