Absorption of Si, Ge, and SiGe alloy nanocrystals embedded in SiO2 matrix

被引:5
作者
Avdeev, I. D. [1 ]
Belolipetsky, A. V. [1 ]
Ha, N. N. [2 ]
Nestoklon, M. O. [1 ]
Yassievich, I. N. [1 ]
机构
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] Hanoi Univ Sci & Technol, Int Training Inst Mat Sci, 1 Dai Co Viet Rd, Hanoi, Vietnam
关键词
OPTICAL-PROPERTIES; PARAMETERS; GERMANIUM; ELECTRON; SILICON;
D O I
10.1063/1.5139960
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using the atomistic sp(3)d(5)s* tight-binding method, we calculate the optical absorption spectra due to phononless optical transitions in Si, Ge, and SiGe alloy nanocrystals embedded in an amorphous dielectric SiO2 matrix. For the SiO2 matrix, we use a virtual crystal approximation assuming the cubic crystalline structure, similar to beta crystobalite, in the proximity of the nanocrystal surface. The optical absorption is analyzed in detail: its dependency on the Ge content and nanocrystal size and the role of the SiO2 matrix are revealed. Our recent experimental measurements of the optical absorption in co-sputtered thin SiO2 films with arrays of Si, Ge, and SiGe alloy nanocrystals are discussed and compared with the simulations. Published under license by AIP Publishing.
引用
收藏
页数:9
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