A Robust Artificial Synapse Based on Organic Ferroelectric Polymer

被引：185

作者：

Tian, Bobo ^{[1
,2
]}

Liu, Lan ^{[2
]}

Yan, Mengge ^{[1
]}

Wang, Jianlu ^{[2
]}

Zhao, Qingbiao ^{[1
]}

Zhong, Ni ^{[1
]}

Xiang, Pinghua ^{[1
]}

Sun, Lin ^{[1
]}

Peng, Hui ^{[1
]}

Shen, Hong ^{[2
]}

Lin, Tie ^{[2
]}

Dkhi, Brahim ^{[3
]}

Meng, Xiangjian ^{[2
]}

Chu, Junhao ^{[1
,2
]}

Tang, Xiaodong ^{[1
]}

Duan, Chungang ^{[1
,4
]}

机构：

[1] East China Normal Univ, Key Lab Polar Mat & Devices, Dept Optoelect Sci & Engn, Minist Educ, Shanghai 200241, Peoples R China

[2] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

[3] Univ Paris Saclay, Lab Struct Proprietes & Modelisat Solides, Ctr Supelec, CNRS UMR8580, F-91190 Gif Sur Yvette, France

[4] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China

来源：

ADVANCED ELECTRONIC MATERIALS | 2019年 / 5卷 / 01期

关键词：

artificial synapses; ferroelectric; memristors; organic; PVDF; POLARIZATION; RETENTION; DYNAMICS;

D O I：

10.1002/aelm.201800600

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Memristors with history-dependent resistance are considered as artificial synapses and have potential in mimicking the massive parallelism and low-power operation existing in the human brain. However, the state-of-the-art memristors still suffer from excessive write noise, abrupt resistance variation, inherent stochasticity, poor endurance behavior, and costly energy consumption, which impedes massive neural architecture. A robust and low-energy consumption organic three-terminal memristor based on ferroelectric polymer gate insulator is demonstrated here. The conductance of this memristor can be precisely manipulated to vary between more than 1000 intermediate states with the highest OFF/ON ratio of approximate to 10(4). The quasicontinuous resistive switching in the MoS2 channel results from the ferroelectric domain dynamics as confirmed unambiguously by the in situ real-time correlation between dynamic resistive switching and polarization change. Typical synaptic plasticity such as long-term potentiation and depression (LTP/D) and spike-timing dependent plasticity (STDP) are successfully simulated. In addition, the device is expected to experience 1 x 10(9) synaptic spikes with an ultralow energy consumption for each synaptic operation (less than 1 fJ, compatible with a bio-synaptic event), which highlights its immense potential for the massive neural architecture in bioinspired networks.

引用

页数：8

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[1] CAN PROGRAMMING BE LIBERATED FROM VON NEUMANN STYLE - FUNCTIONAL STYLE AND ITS ALGEBRA OF PROGRAMS [J].