Creation of Reactive Micro Patterns on Silicon by Scanning Electrochemical Microscopy

被引:19
作者
Valenti, Giovanni [1 ]
Bardini, Luca [1 ]
Bonazzi, Dania [1 ]
Rapino, Stefania [1 ]
Marcaccio, Massimo [1 ]
Paolucci, Francesco [1 ]
机构
[1] Univ Bologna, Dipartimento Chim G Ciamician, I-40126 Bologna, Italy
关键词
ORDERED ORGANIC MONOLAYERS; ETCHANT LAYER TECHNIQUE; HORSERADISH-PEROXIDASE; AMPEROMETRIC DETECTION; DIAZONIUM SALTS; SI(001) SURFACE; REDUCTION; CHEMISTRY; KINETICS; SI(111);
D O I
10.1021/jp1067928
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A chemical route to locally etch the native silica film on silicon, using the SECM, thus creating patterns of reactive Si-H holes, is described. The procedure is based on the alteration of the pH in the volume between the SECM tip and the pristine p-Si substrate so as to turn locally the initially inert fluoride solution into a strong etchant capable to bear holes through the SiO(2) native layer in a very controlled and highly reproducible way. The direct electrochemical grafting of p-NO(2)-benzene diazonium cation into the etched Si-H holes and the subsequent functionalization of the electrografted organic layer by either a fluorescent probe or a redox probe (HRP) were then used to highlight the versatility of this approach for the fabrication of micropatterned functional surfaces.
引用
收藏
页码:22165 / 22170
页数:6
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