Flexible Resistive Switching Memory Device Based on Graphene Oxide

被引：155

作者：

Hong, Seul Ki ^{[1
]}

Kim, Ji Eun ^{[2
]}

Kim, Sang Ouk ^{[2
]}

Choi, Sung-Yool ^{[3
]}

Cho, Byung Jin ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[3] Elect & Telecommun Res Inst, Taejon 305700, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

Flexible memory; graphene oxide; resistive switching memory; WORK-FUNCTION; FILMS;

D O I：

10.1109/LED.2010.2053695

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A resistive switching memory device based on graphene oxide (GO) is presented. It is found that the resistive switching characteristic has a strong dependence on electrode material and GO thickness. In our experiment, an Al/GO/ITO structure with 30-nm-thick GO shows good switching performance with an on/off resistance ratio of 10(3), low set/reset voltage, and excellent data retention. The GO memory is also fabricated on a flexible substrate with no degradation in switching property, even when the substrate is bent down to 4-mm radius, indicating that the GO memory is an excellent candidate to be a memory device for future flexible electronics.

引用

页码：1005 / 1007

页数：3

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