DSA planarization approach to solve pattern density issue

被引：11

作者：

Barros, P. Pimenta ^{[1
]}

Gharbi, A. ^{[1
]}

Sarrazin, A. ^{[1
]}

Tiron, R. ^{[1
]}

Posseme, N. ^{[1
]}

Barnola, S. ^{[1
]}

Bos, S. ^{[1
]}

Tallaron, C. ^{[1
]}

Claveau, G. ^{[1
]}

Chevalier, X. ^{[2
]}

Argoud, M. ^{[1
]}

Servin, I. ^{[1
]}

Navarro, C. ^{[2
]}

Nicolet, C. ^{[2
]}

Lapeyre, C. ^{[1
]}

Monget, C. ^{[3
]}

机构：

[1] CEA LETI, F-38054 Grenoble, France

[2] ARKEMA FRANCE, F-64170 Lacq, France

[3] STMicrolect, F-38920 Crolles, France

来源：

ADVANCED ETCH TECHNOLOGY FOR NANOPATTERNING IV | 2015年 / 9428卷

关键词：

block copolymer; PS-b-PMMA; contact-hole shrink; PMMA removal; etching transfer;

D O I：

10.1117/12.2086810

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Directed Self-Assembly (DSA) of Block Copolymers (BCP) is one of the most promising solutions for sub-10 nm nodes. However, some challenges need to be addressed for a complete adoption of DSA in manufacturing such as achieving DSA-friendly design, low defectivity and accurate pattern placement. In this paper, we propose to discuss the DSA integration flows using graphoepitaxy for contact-hole patterning application. DSA process dependence on guiding pattern density has been studied and solved thanks to a new approach called "DSA planarization". The capabilities of this new approach have been evaluated in terms of defectivity, Critical Dimension (CD) control and uniformity before and after DSA etching transfer.

引用

页数：10

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