New insights into single event transient propagation in chains of inverters - Evidence for propagation-induced pulse broadening

被引:116
作者
Ferlet-Cavrois, V. [1 ]
Paillet, P. [1 ]
McMorrow, D. [2 ]
Fel, N. [1 ]
Baggio, J. [1 ]
Girard, S. [1 ]
Duhamel, O. [1 ]
Melinger, J. S. [2 ]
Gaillardin, M. [3 ]
Schwank, J. R. [4 ]
Dodd, P. E. [4 ]
Shaneyfelt, M. R. [4 ]
Felix, J. A. [4 ]
机构
[1] CEA, DIF, F-91680 Bruyeres Le Chatel, France
[2] USN, Res Lab, Washington, DC 20375 USA
[3] IMEP ENESERG, F-38016 Grenoble, France
[4] Sandia Natl Labs, Albuquerque, NM 87123 USA
关键词
chains of inverters; digital single event transients; heavy ion and pulsed laser irradiation; propagation-induced pulse broadening (PIPB) effect; SET propagation; SET width;
D O I
10.1109/TNS.2007.910202
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The generation and propagation of single event transients (SET) is measured and modeled in SOI inverter chains with different designs.. SET propagation in inverter chains induces significant modifications of the transient width. In some cases, a "propagation-induced pulse broadening" (PIPB) effect is observed. Initially narrow transients, less than 200 ps at the struck node, are progressively broadened up to the nanosecond range, with the degree of broadening dependent on the transistor design and the length of propagation. The chain design (transistor size and load) is shown to have a major impact on the transient width modification.
引用
收藏
页码:2338 / 2346
页数:9
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