High-power blue laser diodes with indium tin oxide cladding on semipolar (20(2)over-bar(1)over-bar) GaN substrates

被引：55

作者：

Pourhashemi, A. ^{[1
]}

Farrell, R. M. ^{[1
]}

Cohen, D. A. ^{[1
]}

Speck, J. S. ^{[1
]}

DenBaars, S. P. ^{[1
,2
]}

Nakamura, S. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 11期

关键词：

Semiconductor alloys - Indium alloys - Gallium nitride - III-V semiconductors - Ridge waveguides - Tin oxides - Cladding (coating) - Quantum efficiency - Quantum theory;

D O I：

10.1063/1.4915324

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (20 (2) over bar(1) over bar) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451nm at room temperature, an output power of 2.52W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%. (C) 2015 AIP Publishing LLC.

引用

页数：4

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