Thermoelectric properties of BaSi2, SrSi2, and LaSi

被引:51
作者
Hashimoto, Kohsuke [1 ]
Kurosaki, Ken [1 ]
Imamura, Yasushi [1 ]
Muta, Hiroaki [1 ]
Yamanaka, Shinsuke [1 ]
机构
[1] Osaka Univ, Grad Sch Engn, Div Sustainable Energy & Environm Engn, Suita, Osaka 5650871, Japan
关键词
D O I
10.1063/1.2778747
中图分类号
O59 [应用物理学];
学科分类号
摘要
We studied the thermoelectric properties of BaSi2, SrSi2, and LaSi. The polycrystalline samples were prepared by spark plasma sintering (SPS). The electrical resistivity (rho), Seebeck coefficient (S), and thermal conductivity (kappa) were measured above room temperature. The power factor (S-2/rho) is quite low (below 10(-5) Wm(-1) K-2 over the whole temperature range) for BaSi2 and LaSi, while relatively high (1.19x10(-3) Wm(-1) K-2 at 331 K) for SrSi2. BaSi2 exhibits quite low kappa. The kappa values at room temperature are 1.56, 5.25, and 6.71 Wm(-1) K-1 for BaSi2, SrSi2, and LaSi, respectively. The maximum values of the dimensionless figure of merit, ZT=(ST)-T-2/rho/kappa, are 0.01 at 954 K for BaSi2, 0.09 at 417 K for SrSi2, and 0.002 at 957 K for LaSi.
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页数:5
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共 15 条
  • [1] [Anonymous], ANGEW CHEM, DOI [10.1002/ange,19650770605, DOI 10.1002/ANGE,19650770605]
  • [2] [Anonymous], 1963, Angew. Chem. Int. Ed
  • [3] Lanthanum-silicon system
    Bulanova, MV
    Zheltov, PN
    Meleshevich, KA
    Saltykov, PA
    Effenberg, G
    Tedenac, JC
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2001, 329 (1-2) : 214 - 223
  • [4] AB COMPOUNDS WITH SC Y AND RARE EARTH METALS .2. FEB AND CRB TYPE STRUCTURES OF MONOSILICIDES AND GERMANIDES
    HOHNKE, D
    PARTHE, E
    [J]. ACTA CRYSTALLOGRAPHICA, 1966, 20 : 572 - +
  • [5] Electrical properties of polycrystalline SrSi2 -: art. no. 032102
    Imai, M
    Naka, T
    Furubayashi, T
    Abe, H
    Nakama, T
    Yagasaki, K
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (03) : 1 - 3
  • [6] Phase transitions of alkaline-earth-metal disilicides MAESi2 (MAE = Ca, Sr, and Ba) at high pressures and high temperatures
    Imai, M
    Kikegawa, T
    [J]. CHEMISTRY OF MATERIALS, 2003, 15 (13) : 2543 - 2551
  • [7] ELECTRICAL-RESISTIVITY OF METASTABLE PHASES OF BASI2 SYNTHESIZED UNDER HIGH-PRESSURE AND HIGH-TEMPERATURE
    IMAI, M
    HIRANO, T
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 1995, 224 (01) : 111 - 116
  • [8] Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method
    Kishino, Shingo
    Imai, Tomohiro
    Iida, Tsutomu
    Nakaishi, Yoshiaki
    Shinada, Masato
    Takanashi, Yoshifumi
    Hamada, Noriaki
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2007, 428 (1-2) : 22 - 27
  • [9] Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy
    Morita, K.
    Inomata, Y.
    Suemasu, T.
    [J]. THIN SOLID FILMS, 2006, 508 (1-2) : 363 - 366
  • [10] Investigation of the energy band structure of orthorhombic BaSi2 by optical and electrical measurements and theoretical calculations
    Nakamura, T
    Suemasu, T
    Takakura, K
    Hasegawa, F
    Wakahara, A
    Imai, M
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (06) : 1032 - 1034