Quantum anomalous Hall and valley quantum anomalous Hall effects in two-dimensional d0 orbital XY monolayers

被引:34
|
作者
Wang, Kang [1 ]
Li, Yihui [1 ]
Mei, Haoliang [1 ]
Li, Ping [1 ,2 ,3 ,4 ]
Guo, Zhi-Xin [1 ,2 ]
机构
[1] Xi An Jiao Tong Univ, Sch Mat Sci & Engn, Ctr Spintron & Quantum Syst, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
[2] Fudan Univ, Minist Educ, Key Lab Computat Phys Sci, Shanghai 200433, Peoples R China
[3] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[4] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
基金
中国国家自然科学基金;
关键词
FERROMAGNETISM; CONDUCTANCE; INSULATOR; SURFACE; STATES;
D O I
10.1103/PhysRevMaterials.6.044202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We propose a new family of the d(0) orbital XY (X = K, Rb, Cs; Y = N, P, As, Sb, Bi) monolayers with abundant and novel topology and valley properties. The KN, RbN, RbP, RbAs, CsP, CsAs, and CsSb monolayers possess remarkable quantum anomalous Hall effect (QAHE). The CsSb monolayer also exhibits extraordinary valley QAHE with giant splitting. Moreover, the topological properties of XY monolayers can be efficiently tuned by the in-plane strain, owing to the strain-induced band inversion between the p(x,y) and p(z) orbitals. Our findings suggest that the d(0) orbital XY monolayers can be good candidates for promising applications in the spintronics and multifunctional topological-based devices.
引用
收藏
页数:10
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