Cross-sectional scanning tunneling microscopy of biased semiconductor lasers

被引：3

作者：

Cobley, R. J. ^{[1
]}

Teng, K. S. ^{[1
]}

Brown, M. R. ^{[1
]}

Wilks, S. P. ^{[1
]}

机构：

[1] Univ Coll Swansea, Sch Engn, Multidisciplinary Nanotechnol Ctr, Swansea SA2 8PP, W Glam, Wales

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2757006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cross-sectional scanning tunneling microscopy is applied to semiconductor lasers which are biased and producing light. Two device structures are investigated-a double quantum well laser and a buried heterostructure device with two-dimensional growth variation. Scanning tunneling microscopy (STM) images are collected as a function of sample drive bias. Changes that occur in the STM image as a result of powering the sample are observed, which are due to changes in the energy band structure and the carrier concentration in the device as it responds to bias. The observed changes are largely reversible and a model is presented which matches and confirms this behavior. Once these effects are confirmed and decoupled, the technique can be used to study device-specific behavior resulting from physical changes in lasers as they are operated. (c) 2007 American Institute of Physics.

引用

页数：7

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