Multi-mechanism reliabflity modeling and management in dynamic systems

被引:36
作者
Karl, Eric [1 ]
Blaauw, David [1 ]
Sylvester, Dennis [1 ]
Mudge, Trevor [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48105 USA
基金
美国国家科学基金会;
关键词
integrated circuit (IC) reliability; reliability management; system-level reliability modeling;
D O I
10.1109/TVLSI.2007.915477
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Reliability failure mechanisms, such as time-dependent dielectric breakdown (TDDB), electromigration, and negative bias temperature instability (NBTI), have become a key concern in integrated circuit (IC) design. The traditional approach to reliability qualification assumes that the system will operate at maximum performance continuously under worst case voltage and temperature conditions. In reality, due to widely varying environmental conditions and an increased use of dynamic control techniques, such as dynamic voltage scaling and sleep modes, the typical system spends a very small fraction of its operational time at maximum voltage and temperature. In this paper, we show how this results in a reliability "slack" that can be leveraged to provide increased performance during periods of peak processing demand. We develop a novel, real time reliability model based on workload driven conditions. Based on this model, we then propose a new dynamic reliability management (DRM) scheme that results in 20%-35% performance improvement during periods of peak computational demand while ensuring the required reliability lifetime.
引用
收藏
页码:476 / 487
页数:12
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