Retention mechanism study of the ferroelectric field effect transistor

被引:56
作者
Pan, Xiao [1 ]
Ma, T. P. [1 ,2 ]
机构
[1] Yale Univ, Dept Appl Phys, New Haven, CT 06511 USA
[2] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA
关键词
MEMORY; POLARIZATION; CAPACITORS; DYNAMICS; TIME;
D O I
10.1063/1.3609323
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single-transistor ferroelectric field effect transistor offers attractive features for future memory applications, such as scalable cell structure, high speed, and low power consumption. However, its relatively short retention time has prevented its application as a non-volatile memory. In order to investigate its retention mechanism, we have developed an automatic retention measurement technique, which enables direct flatband voltage tracking shortly after programming. Two mechanisms, based on the effects of the depolarization field and the gate leakage followed by trapping, respectively, have been identified responsible for the memory window loss in different time regimes, according to the data obtained from this technique. (C) 2011 American Institute of Physics. [doi:10.1063/1.3609323]
引用
收藏
页数:3
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