Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands

被引：0

作者：

Shang Li-Yan ^{[1
]}

Lin Tie ^{[1
]}

Zhou Wen-Zheng ^{[1
,2
]}

Guo Shao-Ling ^{[1
]}

Li Dong-Lin ^{[3
]}

Gao Hong-Ling ^{[3
]}

Cui Li-Jie ^{[3
]}

Zeng Yi-Ping ^{[3
]}

Chu Jun-Hao ^{[1
,4
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Guangxi Univ, Phys Sci & Technol Coll, Nanning 530004, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

[4] E China Normal Univ, ECNU SITP Joint Lab Imaging Informat, Shanghai 200062, Peoples R China

来源：

ACTA PHYSICA SINICA | 2008年 / 57卷 / 06期

关键词：

In0.53Ga0.47As/In-0.52 Al0.48As quantum well; filling factor; magnetotransport measurement;

D O I：

10.7498/aps.57.3818

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The magnetic field dependence of filling factors has been investigated on InP based In-0.53 Ga0.47As/In-0.52 Al-0.48 As quantum well samples with two occupied subbands by means of magnetotransport measurements at the temperature of 1.5 K in a magnetic field range of 0 to 13 T. Under the condiction that Laundau-level broadening is larger than the spin splitting of each subband, filling factors are even when the splitting energy of two subbands is an integer multiple of the cyclotron energy, i. e. Delta E-21 = khw(c). If the splitting energy of two subbands is half of an odd interger multiple of the cyclotron erergy, i. e. Delta E-21 = (2 k + 1) hw(c) /2, the filling factor is odd.

引用

页码：3818 / 3822

页数：5

共 13 条

[1] Odd filling factor quantum Hall sequence in magnetic type-III quantum wells [J].

Buhmann, H ;

Novik, EG ;

Daumer, V ;

Liu, J ;

Gui, YS ;

Becker, CR ;

Molenkamp, LW .

APPLIED PHYSICS LETTERS, 2005, 86 (21) :1-3

[2] Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy [J].

Chauveau, JM ;

Androussi, Y ;

Lefebvre, A ;

Di Persio, J ;

Cordier, Y .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) :4219-4225

[3] Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors [J].

Li Dong-Lin ;

Zeng Yi-Ping .

ACTA PHYSICA SINICA, 2006, 55 (07) :3677-3682

[4] Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands [J].

Li-Yan, Shang ;

Tie, Lin ;

Wen-Zheng, Zhou ;

Zhi-Ming, Huang ;

Dong-Lin, Li ;

Hong-Ling, Gao ;

Li-Jie, Cui ;

Yi-Ping, Zeng ;

Shao-Ling, Gun ;

Jun-Hao, Chu .

ACTA PHYSICA SINICA, 2008, 57 (04) :2481-2485

[5]

QIN ZJ, 2004, SOLID STATE COMMUN, V129, P187

[6] Electron transport properties of MM-HEMT with varied channel indium contents [J].

Qiu, ZJ ;

Jiang, CP ;

Gui, YS ;

Shu, XZ ;

Guo, SL ;

Chu, JH ;

Cui, LJ ;

Zeng, YP ;

Zhu, ZP ;

Wang, BQ .

ACTA PHYSICA SINICA, 2003, 52 (11) :2879-2882

[7] MAGNETOINTERSUBBAND OSCILLATIONS OF CONDUCTIVITY IN A 2-DIMENSIONAL ELECTRON-SYSTEM [J].

RAIKH, ME ;

SHAHBAZYAN, TV .

PHYSICAL REVIEW B, 1994, 49 (08) :5531-5540

[8] Pauli paramagnetism and Landau level crossing in a modulation doped CdMnTe/CdMgTe quantum well [J].

Teran, FJ ;

Potemski, M ;

Maude, DK ;

Andrearczyk, T ;

Jaroszynski, J ;

Karczewski, G .

PHYSICAL REVIEW LETTERS, 2002, 88 (18) :1868031-1868034

[9] Band parameters for III-V compound semiconductors and their alloys [J].

Vurgaftman, I ;

Meyer, JR ;

Ram-Mohan, LR .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :5815-5875

[10]

WESLCH DF, 1984, J APPL PHYS, V55, P3176

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