The improved polarization retention through high-field charge injection in highly strained BiFeO3 thin films with preferred domain orientations

被引：15

作者：

Liu, X. B. ^{[1
]}

Ding, N. F. ^{[2
]}

Jiang, A. Q. ^{[1
]}

Yang, P. X. ^{[2
]}

机构：

[1] Fudan Univ, State Key Lab ASIC & Syst, Dept Microelect, Shanghai 200433, Peoples R China

[2] E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 13期

基金：

中国国家自然科学基金;

关键词：

FERROELECTRIC PROPERTIES;

D O I：

10.1063/1.3697989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We transferred nanosecond ferroelectric domain switching currents of leaky Fe-enriched bismuth ferrite thin films into polarization-electric (P-E) hysteresis loops from which nanosecond-range polarization retention as well as imprint was extracted. All the films suffer from a quick remanent polarization loss after 4 mu s due to the appearance of a strong depolarization field arising from frozen compensation charges and large lattice-mismatching stresses. However, under an opposite field stressing the polarization enhances via near-electrode charge injection and approaches a theoretical value after 1000 s, which supplies an effective way to symmetrize the P-E loop of a highly strained ferroelectric thin film. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697989]

引用

页数：4