Resonant thermal terahertz metasurface-based emitters on n-GaAs/GaAs

被引：0

作者：

Cizas, V ^{[1
]}

Grigelionis, I ^{[1
]}

Ikamas, K. ^{[2
]}

Jakstas, V ^{[1
]}

Jokubauskis, D. ^{[1
]}

Biciunas, A. ^{[1
]}

Urbanowicz, A. ^{[1
]}

Treideris, M. ^{[1
]}

Butkute, R. ^{[1
]}

Minkevicius, L. ^{[1
]}

机构：

[1] Ctr Phys Sci & Technol, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania

[2] Vilnius Univ, Inst Appl Electrodynam & Telecommun, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania

来源：

2022 47TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ 2022) | 2022年

关键词：

D O I：

10.1109/IRMMW-THz50927.2022.9896020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal metamaterial GaAs-based emitters operating in THz range were developed and investigated. Structures of desired parameters were simulated using 3D finite difference time domain method, and produced with a square geometry metasurface on the top structured by UV laser lithography. Depending on the metacell geometrical parameters the emission spectra of the heated samples (up to 400 degrees C) revealed resonant emission features in the range from 0.7 THz to 1.2 THz and the bandwidth of 0.29 THz. The demonstrated principle of using n-GaAs instead of metal bottom layer and unintentionally doped GaAs as dielectric spacer paves the way for thermal emitters compatible with III-V semiconductor system-based THz optoelectronics technology.

引用

页数：2

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