Comparison of the microstructure and chemistry of GaN(0001) films grown using trimethylgallium and triethylgallium on AlN/SiC substrates

被引：1
作者：
Park, JS [1 ]
Reitmeier, ZJ [1 ]
Davis, RF [1 ]
机构：
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
来源：
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 | 2005年 / 2卷 / 07期
关键词：
VAPOR-PHASE EPITAXY; ALKYL SOURCES; DEEP LEVELS; GAN; DECOMPOSITION; MOVPE; TEMPERATURES; CARBON;
D O I：
10.1002/pssc.200461373
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The metalorganic chemical vapor deposition of GaN(0001) films using triethylgallium (TEG) and trimethylgallium (TMG) precursors on AlN/6H-SiC(0001) substrates has been conducted using various sets of two temperatures, and the microstructural and chemical differences in the films determined. Growth of films at 980 degrees C and 1020 degrees C using TEG and TMG, respectively, resulted in the formation of separate elongated islands. Growth at the optimum temperatures (for our system) of 1020 degrees C and 1050 degrees C using these two respective precursors resulted in smooth surface microstructures. Analogous depositions at 1050 degrees C and 1080 degrees C resulted in the formation of hillocks over most of the surfaces. In the GaN films grown using TEG at 1020 degrees C the concentrations of carbon (3x10(17) cm(-3)) and hydrogen (1x10(18) cm(-3)) were similar to 10 times and similar to 2 times lower than in the films deposited using TMG at 1050 degrees C. The concentrations of oxygen and silicon were 1x10(17) cm(-3) in the films grown using either precursor. Atomic force microscopy of the films grown using TEG and TMG at 1020 degrees C and 1050 degrees C, respectively, revealed a similar surface roughness with rms values of similar to 1.8 nm within 50 mu m x 50 mu m scans. The full width at half maxima determined from omega scans of the GaN(0002) peak were similar to 250 arcsec for films grown using both precursors. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：2166 / 2169
页数：4
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