Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

被引：3

作者：

Andresen, SE

Sorensen, BS

Rasmussen, FB

Lindelof, PE

Sadowski, J

Guertler, CM

Bland, JAC

机构：

[1] Univ Copenhagen, Niels Bohr Inst, fAPG, Orsted Lab, DK-2100 Copenhagen O, Denmark

[2] Lund Univ, MAX Lab, S-22100 Lund, Sweden

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 06期

关键词：

D O I：

10.1063/1.1602945

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band. (C) 2003 American Institute of Physics.

引用

页码：3990 / 3994

页数：5