Wide Bandgap Semiconductor-Based Converters for EV and HEV Magnetically Coupled Resonant Wireless Power Transfer

被引：2
作者：
Dinis, Joao [1 ]
Cardoso, Antonio J. Marques [1 ]
机构：
[1] Univ Beira Interior, CISE Electromechatron Syst Res Ctr, P-6201001 Covilha, Portugal
来源：
2021 SIXTEENTH INTERNATIONAL CONFERENCE ON ECOLOGICAL VEHICLES AND RENEWABLE ENERGIES (EVER) | 2021年
关键词：
Resonant Converters; Wide Bandgap Semiconductors; Wireless Power Transfer; Zero-Current Switching;
D O I：
10.1109/EVER52347.2021.9456605
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
This paper evaluates the feasibility of wide-bandgap semiconductors as a replacement for silicon semiconductors, applied in a full bridge resonant converter for EV and HEV magnetically coupled resonant wireless power transfer, as a way to increase the efficiency of the process. The work consists of a series of simulations to study the impact of different input voltages, switching frequencies, and output load values on the overall efficiency of the system, for three distinct semiconductor technologies: Si MOSFET, GaN transistor, and SiC MOSFET.
引用
收藏
页数：8
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