High efficiency power amplifier module with novel enhancement-mode heterojunction FETs for wide-band CDMA handsets

被引：12

作者：

Bito, Y ^{[1
]}

Kato, T ^{[1
]}

Iwata, N ^{[1
]}

机构：

[1] NEC Corp Ltd, Compound Semiconductor Device Div, Otsu, Shiga 5200833, Japan

来源：

GAAS IC SYMPOSIUM - 22ND ANNUAL, TECHNICAL DIGEST 2000 | 2000年

关键词：

D O I：

10.1109/GAAS.2000.906334

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 0.1cc high efficiency power amplifier multi chip module (MCM) employing novel enhancement-mode double-doped AlGaAs/InGaAs/AlGaAs heterojunction FETs (HJFET) has been successfully developed for 1.9GHz wide-band CDMA handsets. The HJFET has a 5nm thickness Al0.5Ga0.5As barrier layer for improving a gate forward turn-on voltage. It was also optimized with thickness of upper and lower Al0.2Ga0.8As electron supply layers to obtain a high maximum drain current. Under single 3.5V operation, the MCM exhibited 26.0dBm output power, a record 47.2% power-added efficiency and 22.3dB associated gain with -35.5dBc adjacent channel leakage power ratio at 5MHz off-center frequency.

引用

页码：255 / 258

页数：4