Increased size of open hexagonally shaped pits due to growth interruption and its influence on InGaN/GaN quantum-well structures grown by metalorganic vapor phase epitaxy

被引：22

作者：

Uchida, K ^{[1
]}

Kawata, M ^{[1
]}

Yang, T ^{[1
]}

Miwa, A ^{[1
]}

Gotoh, J ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 5B期

关键词：

metalorganic vapor phase epitaxy; InGaN; quantum wells; hexahedronal pit; growth-rate variation; compositional fluctuation; re-evaporation;

D O I：

10.1143/JJAP.37.L571

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the influence of growth interruption when group-III sources are temporarily shut off, and that of the number of quantum-well (QW) layers, on the crystalline quality of InGaN/GaN QW structures grown by metalorganic vapor phase epitaxy. Atomic force microscopy measurements revealed that the size of the pits on the QW surface increased dramatically as the interruption time increased. Through transmission electron microscopy and energy dispersive x-ray microanalysis, we found that the pit formation due to growth interruption induces fluctuation in the In composition around the pits in the QW structure: which leads to significant variation in the growth rate as the number of QW layers increases.

引用

页码：L571 / L573

页数：3

共 14 条

[1] Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy
Kenji Uchida
Masahiko Kawata
Tao Yang
Shigeo Goto
Tomoyoshi Mishima
Atsuko Niwa
Jun Gotoh
Journal of Electronic Materials, 1999, 28 : 246 - 251
[2] Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy
Uchida, K
Kawata, M
Yang, T
Goto, S
Mishima, T
Niwa, A
Gotoh, J
JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (03) : 246 - 251
[3] Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
Potin, V
Hahn, E
Rosenauer, A
Gerthsen, D
Kuhn, B
Scholz, F
Dussaigne, A
Damilano, B
Grandjean, N
JOURNAL OF CRYSTAL GROWTH, 2004, 262 (1-4) : 145 - 150
[4] Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy
Qi, YD
Liang, H
Tang, W
Lu, ZD
Lau, KM
JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) : 333 - 340
[5] Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition
Kim, T. K.
Shim, S. K.
Yang, S. S.
Son, J. K.
Hong, Y. K.
Yang, G. M.
CURRENT APPLIED PHYSICS, 2007, 7 (05) : 469 - 473
[6] Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy
Schulte, Kevin L.
Garrod, Toby J.
Kim, Tae Wan
Kirch, Jeremy
Ruder, Steven
Mawst, Luke J.
Kuech, T. F.
JOURNAL OF CRYSTAL GROWTH, 2013, 370 : 293 - 298
[7] Optical characterization of InGaN/GaN multiple quantum well structures grown by metalorganic chemical vapor deposition
Su, Yan-Kuin
Cheng, An-Ting
Lai, Wei-Chi
PHOTON COUNTING APPLICATIONS, QUANTUM OPTICS, AND QUANTUM CRYPTOGRAPHY, 2007, 6583
[8] EXCITONIC PROPERTIES OF ZN1-XCDXSE/ZNSE QUANTUM-WELL STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
OHKI, A
ANDO, K
ZEMBUTSU, S
JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (05) : 529 - 535
[9] Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
Doi, Tomohiro
Honda, Yoshio
Yamaguchi, Masahito
Amano, Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
[10] Metalorganic vapor phase epitaxy growth of a high-quality GaN/InGaN single quantum well structure using a misoriented SiC substrate
Ishibashi, A
Takeishi, H
Uemura, N
Kume, M
Yabuuchi, Y
Ban, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B): : 1961 - 1965

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