Modeling of dynamics of big size ZnGeP2 crystal growth by vertical Bridgman technique

被引：3

作者：

Philippov, M. ^{[1
]}

Babushkin, Y. ^{[1
]}

Efimov, S. ^{[1
]}

Zamyatin, S. ^{[1
]}

Rudnick, V ^{[1
]}

Trofimov, A. ^{[2
]}

Gribenyukov, A. ^{[2
]}

机构：

[1] Tomsk Polytech Univ, Tomsk, Russia

[2] Russian Acad Sci, Siberian Branch, Inst Monitoring Climat & Ecol Syst, Moscow, Russia

来源：

BULLETIN OF THE POLISH ACADEMY OF SCIENCES-TECHNICAL SCIENCES | 2018年 / 66卷 / 03期

关键词：

crystal growth; temperature field; finite elements method; Bridgman technique; NUMERICAL-SIMULATION;

D O I：

10.24425/123434

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of a modelling of big size single crystal ZnGeP2 growth dynamics in the multi-zone thermal installation based on the vertical variant of the Bridgman technique are given. Trustworthiness of the results modeling is achieved by means of creation of the mathematical model taking into account the particularities of the installation as well as the changes in installation work volume during crystallization. Temperature field changes during crystal growth by numerical technique were examined. It is demonstrated that growth container moving has a significant impact on temperature field in work volume and crystallization isotherm local position. Thus, the actual crystal growth rate differs from the nominal velocity of growth container moving. The data received as a result of modelling should be taken into account in new equipment designing, crystallization process control system development and crystal growth experiments planning.

引用

页码：283 / 290

页数：8

共 26 条

[1] Computer-assisted growth of low-EPD GaAs with 3" diameter by the vertical gradient-freeze technique [J].