The analysis of structural and electronic environments of silicon network in HWCVD deposited a-SiC:H films

被引：5

作者：

Swain, Bibhu P. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 21期

关键词：

HWCVD; plasmon energy; valence band; Raman and XPS;

D O I：

10.1016/j.apsusc.2007.04.065

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hydrogenated amorphous silicon carbon alloys (a-SiC:H) films were deposited by hot wire chemical vapour deposition (HWCVD) using SiH(4) and C(2)H(2) as precursor gases. a-SiC:H films were characterized by Fourier Transform Infrared (FTIR) spectroscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Solid-state plasmon of Si network shifts from 19.2 to 20.5 eV by varying C(2)H(2) flow rate from 2 to 10 seem. Incorporation of carbon content changes the valence band structure and s orbital is more dominant than sp and p orbital with carbon incorporation. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：8695 / 8698

页数：4

共 14 条

[1] PROPERTIES OF A-SI1-XCX-H ALLOYS DEPOSITED IN THE HOT-PLASMA-BOX GLOW-DISCHARGE REACTOR [J].

BHUSARI, DM ;

DUSANE, RO ;

KSHIRSAGAR, ST .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 :689-692

[2] EFFECT OF RADIOFREQUENCY POWER AND SUBSTRATE-TEMPERATURE ON PROPERTIES OF HOT-PLASMA-BOX GLOW-DISCHARGE-DEPOSITED HYDROGENATED AMORPHOUS-SILICON CARBON ALLOYS [J].

BHUSARI, DM ;

KSHIRSAGAR, ST .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) :1743-1749

[3] FORMATION OF SIC IN SILICON BY ION IMPLANTATION [J].

BORDERS, JA ;

PICRAUX, ST ;

BEEZHOLD, W .

APPLIED PHYSICS LETTERS, 1971, 18 (11) :509-&

[4] RAMAN-SPECTRA OF AMORPHOUS SIC [J].

INOUE, Y ;

NAKASHIMA, S ;

MITSUISHI, A ;

TABATA, S ;

TSUBOI, S .

SOLID STATE COMMUNICATIONS, 1983, 48 (12) :1071-1075

[5] Characterization of the silicon network disorder in hydrogenated amorphous silicon carbide alloys with low carbon concentrations [J].

Morell, G ;

Katiyar, RS ;

Weisz, SZ ;

Balberg, I .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 194 (1-2) :78-84

[6] The analysis of carbon bonding environment in HWCVD deposited a-SiC:H films by XPS and Raman spectroscopy [J].

Swain, Bibhu P. .

SURFACE & COATINGS TECHNOLOGY, 2006, 201 (3-4) :1589-1593

[7] Influence of process pressure on HW-CVD deposited a-SiC:H films [J].

Swain, Bibhu P. .

SURFACE & COATINGS TECHNOLOGY, 2006, 201 (3-4) :1132-1137

[8] Human serum albumin (HSA) adsorption onto a-SiC:H thin films deposited by hot wire chemical vapor deposition [J].

Swain, Bibhu P. .

APPLIED SURFACE SCIENCE, 2006, 253 (04) :2310-2314

[9] Multiphase structure of hydrogen diluted a-SiC:H deposited by HWCVD [J].

Swain, Bibhu P. ;

Dusane, Rajiv O. .

MATERIALS CHEMISTRY AND PHYSICS, 2006, 99 (2-3) :240-246

[10] Effect of filament temperature on HWCVD deposited a-SiC: H [J].

Swain, Bibhu P. ;

Dusane, Rajiv O. .

MATERIALS LETTERS, 2006, 60 (24) :2915-2919

← 1 2 →