Temperature dependence of TaAlOx metal-insulator-metal capacitors

被引：3
作者：
Hota, M. K. [1 ]
Mallik, S. [1 ]
Sarkar, C. K. [2 ]
Maiti, C. K. [1 ]
机构：
[1] Indian Inst Technol, Dept Elect & ECE, Kharagpur 721302, W Bengal, India
[2] Jadavpur Univ, Dept Elect & Telecommun Engn, Kolkata 700032, India
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 01期
关键词：
D O I：
10.1116/1.3535558
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Structural and electrical properties of amorphous tantalum aluminum oxide (TaAlOx) films deposited using rf magnetron sputtering are investigated using metal-insulator-metal (MIM) capacitor structures with Au as metal electrodes. Crystallinity of the deposited films was studied using grazing incidence x-ray diffraction analysis. The frequency dependence of temperature coefficient of capacitance, an important parameter for precision MIM capacitors, is studied using the Au/TaAlOx/Au stacked layer. The effects of annealing temperature and the ambient on the physical and electrical properties of TaAlOx-based high-k MIM capacitors are reported. Low nonlinearity in capacitance values was found for samples annealed in O-2 ambient. Dielectric loss and permittivity are found to increase with increase in temperature. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3535558]
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页数：5
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