An evaluation of dielectric qualities by using frequency dependence in superbenzene-ring based organic polymer-semiconductors

Dielectric characteristics and electrical conductivity of coronene (C24H12) based metal-polymer-semiconductor (MPS) structure were studied. Cleaning procedure was used to remove all foreign matter from surface of silicon wafer. Al/C24H12/p-Si structure was formed p-Si (111) substrate by evaporation technique. Electrical conductivity (sigma(AC)), electrical modulus (M' and M ''), reel part of the dielectric constant (epsilon'), imaginary part of the dielectric constant, i.e., dielectric loss (epsilon '') and tangent loss (tan delta) of this structure have been calculated. The observations show that interfacial polarization originates more easily at low frequencies and interface states of these nanostructures contributes to the deviation of dielectric properties.