Enhanced pressure dependence of magnetic exchange in A2+[V2]O4 spinels approaching the itinerant electron limit

被引：60

作者：

Blanco-Canosa, S.

Rivadulla, F. ^{[1
]}

Pardo, V.

Baldomir, D.

Zhou, J. -S.

Garcia-Hernandez, M.

Lopez-Quintela, M. A.

Rivas, J.

Goodenough, J. B.

机构：

[1] Univ Santiago de Compostela, Dept Quim Fis, Santiago De Compostela 15782, Spain

[2] Univ Santiago de Compostela, Dept Fis Aplicada, Santiago De Compostela 15782, Spain

[3] Univ Santiago de Compostela, Inst Invest Tecnol, Santiago De Compostela 15782, Spain

[4] Univ Texas, Texas Mat Inst, Austin, TX 78712 USA

[5] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.99.187201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a systematic enhancement of the pressure dependence of T-N in A(2+)[V-2]O-4 spinels as the V-V separation approaches the critical separation for a transition to itinerant-electron behavior. An intermediate phase between localized and itinerant-electron behavior is identified in Zn[V-2]O-4 and Mg[V-2]O-4 exhibiting mobile holes as large polarons. Partial electronic delocalization, cooperative ordering of V-V pairs in Zn[V-2]O-4 below T-s approximate to T-N and dT(N)/dP < 0, signals that lattice instabilities associated with the electronic crossover are a universal phenomenon.

引用

页数：4

共 32 条

[1] Toward reliable density functional methods without adjustable parameters: The PBE0 model [J].