Low-temperature diffused p-n junction with nano/microrelief interface for solar cell applications

被引：4
作者：
Dmitruk, N. L. [1 ]
Borkovskaya, O. Yu [1 ]
Korovin, A. V. [1 ]
Mamontova, I. B. [1 ]
Romanyuk, V. R. [1 ]
Sukach, A. V. [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Phys Semicond, UA-03680 Kiev, Ukraine
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2015年 / 137卷
关键词：
GaAs diffused p-n junction; Nano/microrelief interface; Fluctuation of impurity; Open-circuit voltage; GALLIUM-ARSENIDE; GAAS SURFACE; ZINC; SILICON; MODEL; INP;
D O I：
10.1016/j.solmat.2015.01.019
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The investigation is aimed at elaboration of technology for submicron p(+) -GaAs layer formation on micro/nanotextured n-GaAs substrates by using low-temperature (550 degrees C) diffusion of zinc to take the advantage of optical and recombination properties of textured interface for solar cells. Process duration, surface microrelief morphology (dendrite or quasi-grating (grating-like)) and the substrate doping impurity concentration were varied. Optical, photoelectric and electrical properties of p(+) -n junction were studied to optimize the process conditions. The highest efficiency was obtained in structures with a quasi-grating surface microrelief, substrate doping close to N-d similar or equal to 10(17) cm(-3) and process duration about 45 min. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：124 / 130
页数：7
相关论文
共 26 条
  • [11] Identification of As-vacancy complexes in Zn-diffused GaAs
    Elsayed, M.
    Krause-Rehberg, R.
    Korff, B.
    Richter, S.
    Leipner, H. S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (09)
  • [12] DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL
    GOSELE, U
    MOREHEAD, F
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4617 - 4619
  • [13] Green M.A., 1987, High Efficiency Silicon Solar Cells
  • [14] GREEN MA, 1985, 18TH IEEE PHOT SPEC, P39
  • [15] Enhanced carrier collection observed in mechanically structured silicon with small diffusion length
    Hahn, G
    Zechner, C
    Rinio, M
    Fath, P
    Willeke, G
    Bucher, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) : 7179 - 7182
  • [16] Black nonreflecting silicon surfaces for solar cells
    Koynov, S
    Brandt, MS
    Stutzmann, M
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (20)
  • [17] Landis G., 1988, P 20 IEEE PHOT SPEC, V1, p708
  • [18] FORMATION OF A PN JUNCTION ON AN ANISOTROPICALLY ETCHED GAAS SURFACE USING METALORGANIC CHEMICAL VAPOR-DEPOSITION
    LEON, RP
    BAILEY, SG
    MAZARIS, GA
    WILLIAMS, WD
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (15) : 945 - 947
  • [19] Optical phonon frequencies and damping in AlAs, GaP, GaAs, InP, InAs and InSb studied by oblique incidence infrared spectroscopy
    Lockwood, DJ
    Yu, GL
    Rowell, NL
    [J]. SOLID STATE COMMUNICATIONS, 2005, 136 (07) : 404 - 409
  • [20] STUDY OF NOVEL CHEMICAL SURFACE PASSIVATION TECHNIQUES ON GAAS PN JUNCTION SOLAR-CELLS
    MAUK, MG
    XU, S
    ARENT, DJ
    MERTENS, RP
    BORGHS, G
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (03) : 213 - 215
123