Low-temperature diffused p-n junction with nano/microrelief interface for solar cell applications

被引：4
作者：
Dmitruk, N. L. [1 ]
Borkovskaya, O. Yu [1 ]
Korovin, A. V. [1 ]
Mamontova, I. B. [1 ]
Romanyuk, V. R. [1 ]
Sukach, A. V. [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Phys Semicond, UA-03680 Kiev, Ukraine
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2015年 / 137卷
关键词：
GaAs diffused p-n junction; Nano/microrelief interface; Fluctuation of impurity; Open-circuit voltage; GALLIUM-ARSENIDE; GAAS SURFACE; ZINC; SILICON; MODEL; INP;
D O I：
10.1016/j.solmat.2015.01.019
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The investigation is aimed at elaboration of technology for submicron p(+) -GaAs layer formation on micro/nanotextured n-GaAs substrates by using low-temperature (550 degrees C) diffusion of zinc to take the advantage of optical and recombination properties of textured interface for solar cells. Process duration, surface microrelief morphology (dendrite or quasi-grating (grating-like)) and the substrate doping impurity concentration were varied. Optical, photoelectric and electrical properties of p(+) -n junction were studied to optimize the process conditions. The highest efficiency was obtained in structures with a quasi-grating surface microrelief, substrate doping close to N-d similar or equal to 10(17) cm(-3) and process duration about 45 min. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：124 / 130
页数：7
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