Investigation of the shift of Raman modes of graphene flakes

被引：22

作者：

Haluska, M.

Obergfell, D.

Meyer, J. C.

Scalia, G.

Ulbricht, G.

Krauss, B.

Chae, D. H.

Lohmann, T.

Lebert, M.

Kaempgen, M.

Hulman, M.

Smet, J.

Roth, S.

von Klitzing, K.

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

[2] Tech Univ Eindhoven, Micro & Nano Scale Engn, NL-5600 MB Eindhoven, Netherlands

[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[4] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA USA

[5] Danubia NanoTech, Bratislava, Slovakia

[6] ENEA, I-80055 Naples, Italy

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 11期

关键词：

D O I：

10.1002/pssb.200776202

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In the present work, we use Raman spectroscopy as sensitive tool for the characterization of graphene samples. We observed diverse shifts in the position of the Raman mode close to 2650 cm(-1) in various as-prepared graphene flakes. In order to elucidate the reason for this variation, we checked different substrates (Si/SiO2 and Si/Al2O3) and the effect of the annealing of graphene in argon. We find that most of as-prepared graphene flakes were non-intentional doped by holes, i.e. by physisorbed water and/or oxygen. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：4143 / 4146

页数：4

共 6 条

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