Study of parasitic trapping in alumina used as blocking oxide for nonvolatile memories

被引：7

作者：

Colonna, J. P. ^{[1
]}

Bocquet, M. ^{[1
]}

Molas, G. ^{[1
]}

Rochat, N. ^{[1
]}

Blaise, P. ^{[1
]}

Grampeix, H. ^{[1
]}

Licitra, C. ^{[1
]}

Lafond, D. ^{[1
]}

Masoero, L. ^{[1
]}

Vidal, V. ^{[1
]}

Barnes, J. P. ^{[1
]}

Veillerot, M. ^{[1
]}

Yckache, K. ^{[1
]}

机构：

[1] CEA LETI, F-38054 Grenoble 9, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 01期

关键词：

D O I：

10.1116/1.3535552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Alumina layers deposited by atomic layer deposition followed by rapid thermal anneal were characterized. We found that the crystallization of alumina in gamma-phase occurs between 700 and 850 degrees C. Optical band gap, stress, and density were found to increase upon crystallization. Hydrogen content in alumina was characterized by ToF-SIMS and infrared spectroscopy. We found that annealing ambience has a strong influence on hydrogen concentration: oxygen favors hydrogen desorption from alumina. Finally, charge trapping in alumina was characterized by C(V) measurements. A strong correlation between hydrogen concentration and trapping was established. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3535552]

引用

页数：5