Investigation of domain wall motion in RE-TM magnetic wire towards a current driven memory and logic

被引：31

作者：

Awano, Hiroyuki ^{[1
]}

机构：

[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2015年 / 383卷

关键词：

Memory and logic; Magnetic wire; Spin logic; TbFeCo; Rare earth transition metal; Amorphous ferrimagnetism; Critical current density; Low magnetization; Domain wall velocity; AND; OR; NOT; NAND; NOR; Polycarbonate substrate; Si substrate; Nano-imprint;

D O I：

10.1016/j.jmmm.2014.12.081

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Current driven magnetic domain wall (DW) motions of fern-magnetic TbFeCo wires have been investigated. In the case of a Si substrate, the critical current density (Jc) of DW motion was successfully reduced to 3 x 10(6) A/cm(2). Moreover, by using a polycarbonate (PC) substrate with a molding groove of 600 nm width, the Jc was decreased to 6 x 10(5) A/cm(2). In order to fabricate a logic in memory, a current driven spin logics (AND, OR, NOT) have been proposed and successfully demonstrated under the condition of low Jc. These results indicate that TbFeCo nanowire is an excellent candidate for next generation power saving memory and logic. (C) 2015 The Author. Published by Elsevier B.V.

引用

页码：50 / 55

页数：6

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