Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures

被引：6

作者：

Magalhaes, S. ^{[1
,2
]}

Lorenz, K. ^{[1
,3
]}

Franco, N. ^{[1
,3
]}

Barradas, N. P. ^{[1
,3
]}

Alves, E. ^{[1
,3
]}

Monteiro, T. ^{[2
]}

Amstatt, B. ^{[4
]}

Fellmann, V. ^{[4
]}

Daudin, B. ^{[4
]}

机构：

[1] Inst Tecnol & Nucl, P-2685953 Sacavem, Portugal

[2] Univ Aveiro, P-3810193 Aveiro, Portugal

[3] CFNUL, P-1649003 Lisbon, Portugal

[4] CEA Grenoble, CEA, CNRS Grp, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France

来源：

SURFACE AND INTERFACE ANALYSIS | 2010年 / 42卷 / 10-11期

关键词：

nitrides; quantum dots; heterostructures; annealing; X-ray reflection; Rutherford backscattering spectrometry; RUTHERFORD BACKSCATTERING; MULTILAYERS; GAN; EU;

D O I：

10.1002/sia.3614

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Multilayers consisting of six GaN quantum dot (QD) layers separated by AlN spacer layers were grown by molecular beam epitaxy. Structural properties and the effects of thermal annealing were analyzed using X-ray diffraction (XRD), X-ray reflection (XRR) and Rutherford backscattering spectrometry/Channeling (RBS/C). Annealing was performed in nitrogen atmosphere for 20 min at temperatures between 1000 and 1200 degrees C. The GaN QDs on the surface were destroyed at temperatures >= 1100 degrees C while the AlN spacer layers protected the deeper lying QD layers. The multilayer structure was well preserved for all studied temperatures. Indications of inter diffusion in the interfaces were found. Thickness fluctuations were evidenced by XRR. Copyright (C) 2010 John Wiley & Sons, Ltd.

引用

页码：1552 / 1555

页数：4

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