Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

被引：10

作者：

Wang Jun ^{[1
]}

Hu Hai-Yang ^{[1
]}

Deng Can ^{[1
]}

He Yun-Rui ^{[1
]}

Wang Qi ^{[1
]}

Duan Xiao-Feng ^{[1
]}

Huang Yong-Qing ^{[1
]}

Ren Xiao-Min ^{[1
]}

机构：

[1] BUPT, Inst Informat Photon & Opt Commun, State Key Lab Informat Photon & Opt Commun BUPT, Beijing 100876, Peoples R China

来源：

CHINESE PHYSICS B | 2015年 / 24卷 / 02期

关键词：

GaAs-on-Si growth; dislocation filter; quantum dot; LASERS; SILICON; EPITAXY;

D O I：

10.1088/1674-1056/24/2/028101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots (QDs) as dislocation filters by metalorganic chemical vapor deposition (MOCVD) is investigated in detail. The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized. It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film. Compared with the dislocation density of 5 x 10(7) cm(-2) in the GaAs/Si sample without QDs, a density of 2 x 10(6) cm(-2) is achieved in the sample with QD dislocation filters.

引用

页数：4

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