Halide-Induced Self-Limited Growth of Ultrathin Nonlayered Ge Flakes for High-Performance Phototransistors

2D nonlayered materials have attracted intensive attention due to their unique surface structure and novel physical properties. However, it is still a great challenge to realize the 2D planar structures of nonlayered materials owing to the naturally intrinsic covalent bonds. Ge is one of them with cubic structure impeding its 2D anisotropic growth. Here, the ultrathin single-crystalline Ge flakes as thin as 8.5 nm were realized via halide-assisted self-limited CVD growth. The growth mechanism has been confirmed by experiments and theoretical calculations, which can be attributed to the preferential growth of the (111) plane with the lowest formation energy and the giant interface distortion effect of the Cl-Ge motif. Excitingly, a Ge flake-based phototransistor shows excellent performances such as a high hole mobility of similar to 263 cm(2) V-1 s(-1), a high responsivity of similar to 200 A/W, and fast response rates (tau(rise) = 70 ms, tau(decay) = 6 ms), suggesting its great potential in the applications of electronics and optoelectronics.