Preparation and characterization of MnSe thin films

被引：24

作者：

Mahalingam, T. ^{[1
]}

Thanikaikarasan, S. ^{[1
]}

Dhanasekaran, V. ^{[1
]}

Kathalingam, A. ^{[2
]}

Velumani, S. ^{[3
]}

Rhee, Jin-Koo ^{[2
]}

机构：

[1] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India

[2] Dongguk Univ, Millimeter Wave Innovat Technol Res Ctr, Seoul 100715, South Korea

[3] Ctr Invest & Estudios Avanzados IPN CINVESTAV, San Pedro Zacatenco 07360, Mexico

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2010年 / 174卷 / 1-3期

关键词：

Chalcogenides; Manganese; Thin films; Optical properties; CATHODIC DEPOSITION; GROWTH; TRANSITION; MAGNETITE; FE3O4;

D O I：

10.1016/j.mseb.2010.03.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of manganese selenide (MnSe) were deposited on indium doped tin oxide coated conducting glass (ITO) substrates using potentiostatic electrodeposition technique. The mechanism of formation of MnSe was analyzed in the potential range between 1500 and +1500 mV versus SCE. Structural studies reveal that the deposited films exhibit cubic structure with preferential orientation along (2 0 0) plane. Structural parameters such as crystallite size, strain and dislocation density are calculated and their dependency with bath temperature is studied. Surface morphology and film composition show that films with smooth surface and well-defined stoichiometry were obtained at bath temperature 70 degrees C. The band gap value of the deposited films was evaluated using optical absorption measurements. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：257 / 262

页数：6

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