Observation of Hole Accumulation in Ge/Si Core/Shell Nanowires Using off-Axis Electron Holography

被引：41

作者：

Li, Luying ^{[1
]}

Smith, David J. ^{[1
]}

Dailey, Eric ^{[2
]}

Madras, Prashanth ^{[2
]}

Drucker, Jeff ^{[1
]}

McCartney, Martha R. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[2] Arizona State Univ, Sch Mech Aerosp Chem & Mat Engn, Tempe, AZ 85287 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 02期

关键词：

Core/shell nanowires; hole accumulation; off-axis electron holography; FIELD-EFFECT TRANSISTORS; HETEROSTRUCTURES; ARRAYS; GAS; SI;

D O I：

10.1021/nl1033107

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Hole accumulation in Ge/Si core/shell nanowires (NWs) has been observed and quantified using off-axis electron holography and other electron microscopy techniques. The epitaxial < 110 >-oriented Ge/Si core/shell NWs were grown on Si (111) substrates by chemical vapor deposition through the vapor-liquid-solid growth mechanism. High-angle annular-dark-field scanning transmission electron microscopy images and off-axis electron holograms were obtained from specific NWs. The excess phase shifts measured by electron holography across the NWs indicated the presence of holes inside the Ge cores. Calculations based on a simplified coaxial cylindrical model gave hole densities of (0.4 +/- 0.2) /nm(3) in the core regions.

引用

页码：493 / 497

页数：5

共 16 条

[1] Mapping of electrostatic potentials within core-shell nanowires by electron holography
Chung, JH
Rabenberg, L
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (01)
[2] Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D2GaN3
Crozier, PA
Tolle, J
Kouvetakis, J
Ritter, C
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (18) : 3441 - 3443
[3] "Seedless" vapor-liquid-solid growth of Si and Ge nanowires: The origin of bimodal diameter distributions
Dailey, Eric
Drucker, Jeff
[J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)
[4] Synthesis and Strain Relaxation of Ge-Core/Si-Shell Nanowire Arrays
Goldthorpe, Irene A.
Marshall, Ann F.
McIntyre, Paul C.
[J]. NANO LETTERS, 2008, 8 (11) : 4081 - 4086
[5] Conditions and reasons for incoherent imaging in STEM
Hartel, P
Rose, H
Dinges, C
[J]. ULTRAMICROSCOPY, 1996, 63 (02) : 93 - 114
[6] Hertong M.I. D., 2009, Nano Lett, V9, P3837
[7] Determination of mean inner potential of germanium using off-axis electron holography
Li, J
McCartney, MR
Dunin-Borkowski, RE
Smith, DJ
[J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1999, 55 : 652 - 658
[8] Study of hole accumulation in individual germanium quantum dots in p-type silicon by off-axis electron holography
Li, Luying
Ketharanathan, Sutharsan
Drucker, Jeff
McCartney, Martha R.
[J]. APPLIED PHYSICS LETTERS, 2009, 94 (23)
[9] One-dimensional hole gas in germanium/silicon nanowire heterostructures
Lu, W
Xiang, J
Timko, BP
Wu, Y
Lieber, CM
[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2005, 102 (29) : 10046 - 10051
[10] Electron holography: Phase imaging with nanometer resolution
McCartney, Martha R.
Smith, David J.
[J]. ANNUAL REVIEW OF MATERIALS RESEARCH, 2007, 37 : 729 - 767

← 1 2 →