Effectiveness Analysis of SiC MOSFET Switching Oscillation Damping

被引：4
|
作者：
Wu, Yuying [1 ]
He, Ning [1 ]
Yu, Lingqiang [1 ]
Xu, Dehong [1 ]
Igarashi, Seiki [2 ]
Fujihira, Tatsuhiko [2 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Peoples R China
[2] Fuji Elect Co Ltd, Elect Devices Business Grp, Matsumoto, Nagano, Japan
来源：
2020 IEEE 9TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC2020-ECCE ASIA) | 2020年
关键词：
SiC MOSFET; switching oscillation; snubber; damping; ACTIVE GATE DRIVER; PERFORMANCE;
D O I：
10.1109/IPEMC-ECCEAsia48364.2020.9367969
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SiC MOSFET has received widespread attention for its superior characteristics in comparison with traditional silicon devices. However, fast switching of SiC MOSFET causes undesirable switching oscillations. In this paper, mitigating switching oscillation by changing driver parameters is firstly investigated through experiments. Results show that higher gate resistance and lower drive voltage can reduce oscillation but introduce high switching loss. Afterwards, switching oscillation damping with RC snubber is studied with respect to loss increment and damping effect. Snubber experiments have been conducted with both SiC MOSFET discrete device and module device. The oscillation damping effectiveness with two methods and different devices is compared.
引用
收藏
页码：20 / 27
页数：8
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