Color switching behaviors of organic bistable light-emitting devices fabricated utilizing an aluminum-nanoparticle-embedded tris(8-hydroxyquinoline) aluminum layer and double emitting layers

被引：10
作者：
Lee, Ji Hwan [1 ]
Lee, Yong Hun [2 ]
Choo, Dong Chul [2 ]
Kim, Tae Whan [1 ,2 ]
机构：
[1] Hanyang Univ, Dept Informat Display Engn, Seoul 04763, South Korea
[2] Hanyang Univ, Dept Elect & Comp Engn, Seoul 04763, South Korea
来源：
ORGANIC ELECTRONICS | 2017年 / 50卷
基金：
新加坡国家研究基金会;
关键词：
Organic bistable light-emitting devices; Organic bistable devices; Organic light-emitting diode; Color switching behavior; NEGATIVE-DIFFERENTIAL-RESISTANCE; FIELD-EFFECT TRANSISTORS; MEMORY DEVICES; NONVOLATILE MEMORY; ELECTRICAL BISTABILITY; NANOCOMPOSITES; ENHANCEMENT; MECHANISMS; SYSTEM; DIODES;
D O I：
10.1016/j.orgel.2017.07.023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Organic bistable light-emitting devices (OBLEDs) with an aluminum (Al)-nanoparticle-embedded tris(8-hydroxyquinoline) aluminum (Alq(3)) layer and double emitting layers (EMLs) were fabricated to investigate their color switching behaviors. Scanning electron microscopy images showed that Al nanoparticles were formed on the Alq(3) layer. The Al nanoparticles in the Alq(3) layer improved the storage margin of the organic bistable devices (OBDs), and the double EMLs changed the emission color of the organic lightemitting devices (OLEDs) according to the variations of the ON and the OFF states of the OBDs. The variations of the ON and the OFF states of the OBDs could be clearly distinguished by the color switching of the OLED. The luminances of the OBLEDs with double EMLs in the ON and the OFF states were 641.80 and 22.25 cd/m(2), respectively, and their CIE coordinates at 20 V were (0.42, 0.46) and (0.51, 0.47), respectively, which corresponded to the ON and the OFF states of the OBLEDs. (C) 2017 Published by Elsevier B. V.
引用
收藏
页码：94 / 99
页数：6
相关论文
共 34 条
[1]   Organic materials and thin-film structures for cross-point memory cells based on trapping in metallic nanoparticles [J].
Bozano, LD ;
Kean, BW ;
Beinhoff, M ;
Carter, KR ;
Rice, PM ;
Scott, JC .
ADVANCED FUNCTIONAL MATERIALS, 2005, 15 (12) :1933-1939
[2]   Negative differential resistance effect in organic devices based on an anthracene derivative [J].
Chen, Jiangshan ;
Xu, Liling ;
Lin, Jian ;
Geng, Yanhou ;
Wang, Lixiang ;
Ma, Dongge .
APPLIED PHYSICS LETTERS, 2006, 89 (08)
[3]   Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures [J].
Cho, Byungjin ;
Song, Sunghun ;
Ji, Yongsung ;
Kim, Tae-Wook ;
Lee, Takhee .
ADVANCED FUNCTIONAL MATERIALS, 2011, 21 (15) :2806-2829
[4]   Organic donor-acceptor system exhibiting electrical bistability for use in memory devices [J].
Chu, CW ;
Ouyang, J ;
Tseng, HH ;
Yang, Y .
ADVANCED MATERIALS, 2005, 17 (11) :1440-+
[5]   Organic light emitting field effect transistors: Advances and perspectives [J].
Cicoira, Fabio ;
Santato, Clara .
ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (17) :3421-3434
[6]  
Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
[7]  
2-9
[8]   Switchable organic electroluminescence [J].
Gao, XC ;
Zou, DC ;
Fujita, K ;
Tsutsui, T .
APPLIED PHYSICS LETTERS, 2002, 81 (24) :4508-4510
[9]  
Ishii H, 1999, ADV MATER, V11, P605, DOI 10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO
[10]  
2-Q
1234