Influence of interface structure on oxidation rate of silicon

被引：9
作者：
Takahashi, K
Nohira, H
Nakamura, T
Ohmi, T
Hattori, T
机构：
[1] Musashi Inst Technol, Dept Elect & Elect Engn, Setagaya Ku, Tokyo 1588557, Japan
[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Aoba Ku, Sendai, Miyagi 9808579, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 1AB期
关键词：
SiO2/Si interface structure; interface formation; oxidation reaction; oxidation rate; atomic oxygen; layer-by-layer oxidation; X-ray photoelectron spectroscopy;
D O I：
10.1143/JJAP.40.L68
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
X-ray photoelectron spectroscopy studies on the changes in SiO2/Si(111) interface structures and oxidation rates of Si(lll) with the progress of oxidation were performed for oxide films formed using atomic oxygen at 400 degreesC. The following results are obtained for the same oxidation condition: 1) an atomically uniform oxidation reaction occurs at the SiO2/Si interface, 2) the oxidation rate changes periodically with the progress of oxidation and decreases significantly at specific interface structures. Therefore, it is revealed that the oxidation rate of Si is influenced by the SiO2/Si interface structure.
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页码：L68 / L70
页数：3
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