Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors

被引：11
作者：
Paskaleva, A
Lemberger, M
Zürcher, S
Bauer, AJ
Frey, L
Ryssel, H
机构：
[1] Univ Erlangen Nurnberg, Chair Elect Dev, D-91058 Erlangen, Germany
[2] Swiss Fed Inst Technol, Surface Sci & Technol Lab, CH-8092 Zurich, Switzerland
[3] Fraunhofer Inst Integrated Syst & Dev Technol, D-91058 Erlangen, Germany
来源：
MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 08期
关键词：
D O I：
10.1016/S0026-2714(03)00180-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the present work, the potential of zirconium silicate (ZrSixOy) films as an alternative gate dielectric to SiO2 for future technology generations is demonstrated. Novel single-source precursors for MOCVD of zirconium silicate were synthesized and ZrSixOy layers were deposited. I-V and C-V measurement data are presented and detected charge trapping phenomena are discussed. (C) 2003 Elsevier Ltd. All rights reserved.
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收藏
页码：1253 / 1257
页数：5
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